Title :
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
Author :
Krawczyk, S.K. ; Bejar, M. ; Blanchet, R.C. ; Khoukh, A. ; Sermage, B. ; Cui, D. ; Pavlidis, D.
Author_Institution :
Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France
Abstract :
This paper introduces a new approach, based on Room Temperature (RT) Scanning Photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor heterojunctions; surface recombination; InGaAs(C)/InP heterostructures; InGaAsC-InP; InP; InP substrates; interface recombination velocity; quantitative mapping; scanning photoluminescence technique; surface recombination velocity; Doping; Indium phosphide; Light emitting diodes; Photoluminescence; Radiative recombination; Spatial resolution; Substrates; Surface emitting lasers; Temperature; Velocity measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712764
