DocumentCode
2847067
Title
Investigation of class-B/J continuous modes in broadband GaN power amplifiers
Author
Preis, Sebastian ; Gruner, Daniel ; Boeck, Georg
Author_Institution
Microwave Engineering Lab, Berlin Institute of Technology, Einsteinufer 25, 10587, Germany
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
The class-B/J mode continuum in power amplifiers (PAs) defined at the current source plane is discussed considering different parasitic elements including CDS as well as the package. Based on this realistic device description the change of the continuous load impedances depending on the reference plane is demonstrated. It is shown that the design flexibility predicted by the continuous mode theory decreases if the transistor package is taken into account. The presented investigations provide the basis for the design of a broadband GaN PA. In the frequency range of 0.9 GHz to 1.8 GHz, this PA achieves a saturated output power of more than 70 W with an efficiency η of 56–63 %. In the extended frequency band up to 2.3 GHz an output power of still 60 W with 53 % drain efficiency is available.
Keywords
Broadband amplifiers; Harmonic analysis; Impedance; Power amplifiers; Power generation; Transistors; Broadband amplifiers; Gallium nitride; HEMTs; Impedance matching; Microwave amplifiers; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258413
Filename
6258413
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