Title :
Noise parameter extraction of GaAs MESFETs and PHEMTs from swept noise figure measurements
Abstract :
A new method of measuring and extracting bias dependent noise parameters for GaAs MESFETs and PHEMTs is presented. This technique only requires noise figure and S-parameter measurements over frequency. This eliminates the need for time-consuming traditional sourcepull measurements and facilitates rapid noise parameter extraction. This technique makes the extraction of bias-dependent noise models of MESFETs and PHEMTs practical, for the first time, in a production test environment.
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; GaAs; MESFETs; PHEMTs; S-parameter measurements; bias dependent noise parameters; bias-dependent noise models; noise parameter extraction; production test environment; swept noise figure measurements; Frequency measurement; Gallium arsenide; MESFETs; Noise figure; Noise measurement; PHEMTs; Parameter extraction; Production; Scattering parameters; Working environment noise;
Conference_Titel :
ARFTG Conference Digest, 1998. Computer-Aided Design and Test for High-Speed Electronics. 52nd
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1998.768626
