DocumentCode

2847137

Title

The behavior of junction-gate field-effect transistors beyond pinchoff

Author

Grebene, A. ; Ghandhi, S.

Author_Institution

Rensselaer Polytechnic Institute, Troy, NY, USA

Volume

XI

fYear

1968

fDate

14-16 Feb. 1968

Firstpage

90

Lastpage

91

Keywords

Boundary conditions; Electron mobility; FETs; Lattices; Mathematical model; Poisson equations; Semiconductor materials; Silicon; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1968 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1968.1154671

Filename

1154671