• DocumentCode
    2847143
  • Title

    Non-destructive photoreflectance characterization of sheet carrier density in InAlAs/InGaAs HEMTs

  • Author

    Sugiyama, H. ; Yokoyama, H. ; Wada, K.

  • Author_Institution
    NTT Syst. Electron. Labs., Kanagawa, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    755
  • Lastpage
    757
  • Abstract
    Using room-temperature-photoreflectance (PR), we have succeeded in characterizing InGaAs channel layers of InAlAs/InGaAs high electron mobility transistors (HEMTs). The few peaks are observed in the PR spectra correspond to the transitions between ground- and excited subbands of 2DEG and 2DHG in the channel layer. The peak shift to the higher energy side is monitored with increasing Ns. Thus, PR spectroscopy is quite useful for the non-destructive characterization of Ns at room temperature
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; photoreflectance; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; high electron mobility transistors; nondestructive photoreflectance characterization; room-temperature-photoreflectance; sheet carrier density; Charge carrier density; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Laser beams; Laser excitation; MODFETs; Monitoring; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712766
  • Filename
    712766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2847143