DocumentCode :
2847341
Title :
An electrically alterable NDRO memory cell using bulk bistable resistivity in As-Te-Ge glass
Author :
Sie, C. ; Pohm, A.
Author_Institution :
Iowa State Univ., Ames, Iowa, USA
Volume :
XII
fYear :
1969
fDate :
19-21 Feb. 1969
Firstpage :
192
Lastpage :
192
Keywords :
Atomic measurements; Conductive films; Conductivity; Current measurement; Diodes; Electric resistance; Electrical resistance measurement; Glass; Silicon carbide; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1969.1154685
Filename :
1154685
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2847341
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