DocumentCode
2847341
Title
An electrically alterable NDRO memory cell using bulk bistable resistivity in As-Te-Ge glass
Author
Sie, C. ; Pohm, A.
Author_Institution
Iowa State Univ., Ames, Iowa, USA
Volume
XII
fYear
1969
fDate
19-21 Feb. 1969
Firstpage
192
Lastpage
192
Keywords
Atomic measurements; Conductive films; Conductivity; Current measurement; Diodes; Electric resistance; Electrical resistance measurement; Glass; Silicon carbide; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1969.1154685
Filename
1154685
Link To Document