DocumentCode
2847467
Title
Carrier lifetime in p-doped InGaAs and InGaAsP
Author
Sermage, B. ; Benchimol, J.L. ; Cohen, G.M.
Author_Institution
France Telecom, CNET, Bagneux, France
fYear
1998
fDate
11-15 May 1998
Firstpage
758
Lastpage
760
Abstract
Carrier lifetime has been measured in c and be doped InGaAs and InGaAsP grown by chemical beam epitaxy. At high doping level, carrier lifetime in InGaAs is limited by Auger recombination which is slightly different from that of undoped InGaAs for the same hole density. Carbon doped InGaAsP shows non radiative recombinations linked to the amphoteric nature of carbon in these materials
Keywords
Auger effect; III-V semiconductors; beryllium; carbon; carrier lifetime; chemical beam epitaxial growth; gallium arsenide; gallium compounds; hole density; indium compounds; semiconductor epitaxial layers; semiconductor growth; Auger recombination; InGaAs:Be; InGaAs:C; InGaAsP:Be; InGaAsP:C; carrier lifetime; chemical beam epitaxy; high doping level; radiative recombinations; Charge carrier lifetime; Chemicals; Doping; Epitaxial growth; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712768
Filename
712768
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