DocumentCode
2847481
Title
A W- and G-band MMIC source using InP HBT technology
Author
Kozhuharov, Rumen ; Bao, Mingquan ; Gavell, Marcus ; Zirath, Herbert
Author_Institution
Chalmers University of Technology, Gothenburg, SE-412 96, Sweden
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than −95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of −2dBm in 113 –118 GHz bandwidth and −4dBm from 212 to 228 GHz.
Keywords
Frequency measurement; Harmonic analysis; Heterojunction bipolar transistors; Power generation; Power system harmonics; Voltage-controlled oscillators; Differential doubler; heterojunction bipolar transistor; voltage controlled oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258435
Filename
6258435
Link To Document