DocumentCode :
2847481
Title :
A W- and G-band MMIC source using InP HBT technology
Author :
Kozhuharov, Rumen ; Bao, Mingquan ; Gavell, Marcus ; Zirath, Herbert
Author_Institution :
Chalmers University of Technology, Gothenburg, SE-412 96, Sweden
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than −95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of −2dBm in 113 –118 GHz bandwidth and −4dBm from 212 to 228 GHz.
Keywords :
Frequency measurement; Harmonic analysis; Heterojunction bipolar transistors; Power generation; Power system harmonics; Voltage-controlled oscillators; Differential doubler; heterojunction bipolar transistor; voltage controlled oscillator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6258435
Filename :
6258435
Link To Document :
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