Title :
Optically Switched-Drive-Based Unified Independent dv/dt and di/dt Control for Turn-Off Transition of Power MOSFETs
Author :
Riazmontazer, Hossein ; Mazumder, S.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
Abstract :
To control the switching dynamics of an optically triggered hybrid device, a photonic-control mechanism is outlined. The optically triggered hybrid device comprises a power MOSFET, as the main power semiconductor device (PSD), and a pair of GaAs-based optically triggered power transistors (OTPTs), serving as the driver for the power MOSFET . The switching-transition controller modulates the turn-off transition of the power MOSFET by modulating the optical intensity of the OTPTs. The independent and unified $dv/dt$ and $di/dt$ control of the PSD is achieved using a single control circuit which also predicts the onset of transition between the $di/dt$ and the $dv/dt$ regions of control. Experimental control results validating the OTPT-based dynamical modulation of the turn-off characteristic of the power MOSFET are provided. In this study, the power MOSFET is chosen to be a SiC mosfet . However, the proposed photonic-control mechanism can be extended to Si power MOSFETS as well.
Keywords :
electric current control; power MOSFET; time-varying systems; voltage control; OTPT; PSD; optically switched-drive; optically triggered hybrid device; optically triggered power transistors; photonic-control mechanism; power MOSFET; power semiconductor device; switching dynamics control; switching-transition controller; turn-off transition; unified independent di/dt control; unified independent dv/dt control; Delays; Logic gates; MOSFET; Optical devices; Optical switches; Silicon carbide; Active gate drive; IGBT; di/dt; dv/dt; electromagnetic interference (EMI); gallium arsenide (GaAs); optical gate drive; optically triggered power transistor (OTPT); power mosfet; silicon carbide (SiC); switching loss; switching transients;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2014.2327014