Title :
4-Mb SPI Flash Compatible Phase-Change Memory
Author :
Sheu, Shyh-Shyuan ; Lin, Lieh-Chiu ; Wang, Wen-Han ; Chiang, Pei-Chia ; Su, Keng-Li ; Kao, Ming-Jer ; Tsai, Ming-Jinn
Author_Institution :
ITRI, Hsin Chu
Abstract :
A 4-Mb with SPI serial interface phase-change memory which is completely compatible with the traditional SPI flash memory is implemented in this study. The peripheral circuit is much simpler than flash memory. The 512 Kb sector erase time is less than 7 ms while the 4 Mb bulk erase time is 80 ms only.
Keywords :
flash memories; peripheral interfaces; phase change materials; bulk erase time; flash compatible SPI memory; peripheral circuit; sector erase time; serial interface phase-change memory; storage capacity 4 Mbit; CMOS process; Circuits; Clocks; Flash memory; MOS devices; Phase change materials; Phase change memory; Ring oscillators; Space vector pulse width modulation; Voltage-controlled oscillators;
Conference_Titel :
VLSI Design, Automation and Test, 2007. VLSI-DAT 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0583-1
Electronic_ISBN :
1-4244-0583-1
DOI :
10.1109/VDAT.2007.373202
