• DocumentCode
    2847663
  • Title

    4-Mb SPI Flash Compatible Phase-Change Memory

  • Author

    Sheu, Shyh-Shyuan ; Lin, Lieh-Chiu ; Wang, Wen-Han ; Chiang, Pei-Chia ; Su, Keng-Li ; Kao, Ming-Jer ; Tsai, Ming-Jinn

  • Author_Institution
    ITRI, Hsin Chu
  • fYear
    2007
  • fDate
    25-27 April 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A 4-Mb with SPI serial interface phase-change memory which is completely compatible with the traditional SPI flash memory is implemented in this study. The peripheral circuit is much simpler than flash memory. The 512 Kb sector erase time is less than 7 ms while the 4 Mb bulk erase time is 80 ms only.
  • Keywords
    flash memories; peripheral interfaces; phase change materials; bulk erase time; flash compatible SPI memory; peripheral circuit; sector erase time; serial interface phase-change memory; storage capacity 4 Mbit; CMOS process; Circuits; Clocks; Flash memory; MOS devices; Phase change materials; Phase change memory; Ring oscillators; Space vector pulse width modulation; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2007. VLSI-DAT 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    1-4244-0583-1
  • Electronic_ISBN
    1-4244-0583-1
  • Type

    conf

  • DOI
    10.1109/VDAT.2007.373202
  • Filename
    4239394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2847663