Title :
Microwave silicon windows for high-power broadband switching applications
Author :
Mortenson, K. ; Borrego, J. ; Bakeman, P. ; Gutmann, R.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, N.Y., USA
Abstract :
An X-band switch consisting of a silicon waveguide window with injecting structure will be described. The microwave component, capable of handling 40-kW peak, has a 0.4-dB loss and 10-dB isolation across the complete waveguide band.
Keywords :
Assembly; Conductivity; Contracts; Dielectrics; Flanges; Gaskets; Inductors; Insertion loss; Radio frequency; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154712
