Title :
YIG-tuned transferred electron oscillator using thin-film microcircuits
Author_Institution :
Hewlett-Packard Co., Palo Alto, Calif., USA
Abstract :
A YIG-tuned bulk GaAs oscillator which is electrically tunable from 4-12 GHz with a minimum of +4 dBm power output will be described. Tuning power is less than 0.75 W at 12 GHz.
Keywords :
Circuit optimization; Coupling circuits; Electrons; Gallium arsenide; Heat sinks; Impedance; Magnetic separation; Oscillators; Transistors; Tuning;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154715
