Title :
Computer analysis and simulation of MOS circuits
Author_Institution :
RCA, Camden, N.J., USA
Abstract :
The algorithm, model and results of computer programs with a built-in large signal MOS model that provides DC and transient analysis of P, N or complementary MOS circuits will be covered in this paper.
Keywords :
Algorithms; Analytical models; Capacitance; Circuit analysis computing; Circuit simulation; Computational modeling; Computer simulation; Differential equations; Nonlinear equations; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154718
