DocumentCode
2847822
Title
Computer analysis and simulation of MOS circuits
Author
Feller, A.
Author_Institution
RCA, Camden, N.J., USA
Volume
XII
fYear
1969
fDate
19-21 Feb. 1969
Firstpage
134
Lastpage
135
Abstract
The algorithm, model and results of computer programs with a built-in large signal MOS model that provides DC and transient analysis of P, N or complementary MOS circuits will be covered in this paper.
Keywords
Algorithms; Analytical models; Capacitance; Circuit analysis computing; Circuit simulation; Computational modeling; Computer simulation; Differential equations; Nonlinear equations; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1969.1154718
Filename
1154718
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