Title :
Evaluation of InAlAs Schottky characteristics grown by MOCVD
Author :
Ohshima, T. ; Moriguchi, H. ; Shigemasa, R. ; Gotoh, S. ; Tsunotani, M. ; Kimura, T.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Schottky characteristics of InAlAs grown by MOCVD have been evaluated. InAlAs Schottky characteristics is strongly affected by MOCVD growth temperature. The reverse current of InAlAs grown at 700°C is more than one order of magnitude larger than that for 750°C grown material. From DLTS measurement, a large signal due to an electron trap with an activation energy of 0.45 eV has been observed in InAlAs grown at 700°C. The results of C-V, Hall and SIMS measurements suggest that the trap is of acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs grown at 700°C is thought to be conduction through the trap
Keywords :
III-V semiconductors; MOCVD; Schottky barriers; aluminium compounds; deep level transient spectroscopy; defect states; electron traps; indium compounds; semiconductor growth; semiconductor-metal boundaries; 700 degC; 750 degC; DLTS; Hall effect; InAlAs; InAlAs Schottky characteristics; MOCVD; SIMS measurements; acceptor-type trap; activation energy; electron trap; growth temperature; intrinsic defects; reverse current; Capacitance-voltage characteristics; Degradation; Electrodes; Electron traps; HEMTs; Indium compounds; MOCVD; MODFETs; Schottky barriers; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712770
