Title :
Computer modeling of a subnanosecond transistor including high level injection effects
Author_Institution :
Bell Telephone Labs., Inc., Reading, Pa., USA
Abstract :
A new base-widening theory that predicts nonlinear transistor transit times will be presented. These and special measurement techniques have been used in modeling a subnanosecond transistor to predict the switching performance of a 350-ps emitter coupled pair.
Keywords :
Circuit testing; Conductivity; Laboratories; Pulse circuits; Schottky diodes; Semiconductor process modeling; Switching circuits; Telephony; Transient analysis; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154729
