DocumentCode
2848068
Title
IGFET circuit performance: N-channel vs P-channel
Author
Cheroff, G. ; Critchlow, D. ; Dennard, R. ; Terman, L.
Author_Institution
IBM Corp., Hopewell Junction, N.Y., USA
Volume
XII
fYear
1969
fDate
19-21 Feb. 1969
Firstpage
180
Lastpage
181
Abstract
Previous circuit performance comparisons between N-channel and P-channel IGFETs have not considered the control of device performance with substrate bias. These factors will be described and the resulting performance advantages of N-channel devices illustrated for a memory chip.
Keywords
Capacitance; Circuit optimization; Delay; Doping; Insulation; Power dissipation; Pulse measurements; Silicon; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1969.1154731
Filename
1154731
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