Title :
Anomalous behavior in stacked-gate MOS tetrodes
Author :
Dill, H. ; Bower, R. ; Aubuchon, K. ; Toombs, T.
Author_Institution :
Hughes Research Laboratories, Newport Beach, CA, USA
Abstract :
This paper will describe a new type of trapping effect observed in stacked-gate MOS tetrodes. Control of and application of this effect to an electrically-alterable read-only memory will be discussed.
Keywords :
Acceleration; Circuits; Electron traps; Fabrication; Insulation; Laboratories; Pulse measurements; Stability; Thickness control; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154742
