DocumentCode
2848261
Title
Anomalous behavior in stacked-gate MOS tetrodes
Author
Dill, H. ; Bower, R. ; Aubuchon, K. ; Toombs, T.
Author_Institution
Hughes Research Laboratories, Newport Beach, CA, USA
Volume
XII
fYear
1969
fDate
19-21 Feb. 1969
Firstpage
44
Lastpage
45
Abstract
This paper will describe a new type of trapping effect observed in stacked-gate MOS tetrodes. Control of and application of this effect to an electrically-alterable read-only memory will be discussed.
Keywords
Acceleration; Circuits; Electron traps; Fabrication; Insulation; Laboratories; Pulse measurements; Stability; Thickness control; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1969.1154742
Filename
1154742
Link To Document