Title :
Anisotropic trench etching of Si using SF6/O2 mixture
Author :
Yahong, Yao ; Yongjun, Zhao
Author_Institution :
Dept. of Precision Instrum., Tsinghua Univ., Beijing, China
Abstract :
This paper presents the etching results of single crystalline silicon using SF6/O2 mixture in the traditional RIE work mode of ICP790 system. We investigate the effect of O2 addition on the etched profile and etch rate at system pressure of 35 mTorr and DC bias voltage of 50 V and the SEM photographs are given. According to these results the anisotropic profile can be achieved at a wide process window by adjusting the O2 flow rate. The influences of pressure and DC bias voltage on etch rate and parallel shift degree of the trench vertical edge beneath the mask layer are studied and the respective figures are presented also. The etch rate increases with the system pressure at constant DC bias voltage and it also increases with DC bias voltage at constant gas flow rates. All the experiment results are discussed and explained
Keywords :
elemental semiconductors; micromachining; silicon; sputter etching; 35 mtorr; 50 V; DC bias voltage; ICP790 system; RIE work mode; SEM photographs; SF6; SF6-O2; SF6/O2 mixture; Si; anisotropic trench etching; etch rate; etched profile; mask layer; pressure dependence; single crystalline silicon; trench vertical edge; Anisotropic magnetoresistance; Dry etching; Instruments; Plasma applications; Plasma chemistry; Plasma temperature; Resists; Silicon; Switches; Voltage;
Conference_Titel :
Micromechatronics and Human Science, 1997. Proceedings of the 1997 International Symposium on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4171-6
DOI :
10.1109/MHS.1997.768858
