A Digital Envelope Modulator for an OFDM WLAN Polar Transmitter in 90 nm CMOS

Author

van Zeijl, P.T.M. ; Collados, M.

Author_Institution

Philips Res., Eindhoven

fYear

2007

fDate

25-27 April 2007

Firstpage

1

Lastpage

4

Abstract

A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90 nm digital CMOS process for the 802.11 a/b/g standards. The digital modulator reaches an output power of -5 dBm for 54 Mbit/s using 64 QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7 mW from a 1.2 V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.

Keywords

CMOS digital integrated circuits; OFDM modulation; modulators; quadrature amplitude modulation; radio transmitters; radiofrequency integrated circuits; wireless LAN; 802.11a standards; 802.11b standards; 802.11g standards; CMOS; EVM specifications; OFDM WLAN polar transmitter; QAM; digital envelope modulator; in-band spectral mask; Bandwidth; CMOS process; Digital filters; Digital modulation; OFDM modulation; Power generation; Radio frequency; Switches; Transmitters; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2007. VLSI-DAT 2007. International Symposium on

Conference_Location

Hsinchu

Print_ISBN

1-4244-0583-1

Electronic_ISBN

1-4244-0583-1

Type

conf

DOI

10.1109/VDAT.2007.373242

Filename

4239434