High-efficiency anomalous mode oscillation from silicon IMPATT diodes at 6 GHz

Author

Ying, Rendong ; Mankarious, R. ; English, D.

Author_Institution

Hughes Res. Labs., Newport Beach, CA, USA

Volume

XII

fYear

1969

fDate

19-21 Feb. 1969

Firstpage

Lastpage

Abstract

Pulsed operation of silicon punch-through avalanche diodes has produced oscillations with efficiencies exceeding 30% at 2-3 GHz, and 17% at 6 GHz.

Keywords

Circuits; Diodes; Electric breakdown; Frequency; Germanium; Power generation; Silicon; Substrates; Tuning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa

Conference_Location

Philadelphia, PA, USA

Type

DOI

10.1109/ISSCC.1969.1154754

Filename

1154754

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