Title :
Vertical integration of light-emitting diode chips
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
A novel design and method for assembling a tri-color light-emitting diode (LED) device is proposed and demonstrated. LED chips of the primary colors are physically and tightly stacked on top of each other, enabled by laser-micromachined trenches on the backside of chips. Light emitted from each layer of the stack passes through each other, and thus is mixed naturally without additional optics. As a color-tunable device, a wide range of colors can be generated, making it suitable for display purposes. As a phosphor-free white light LED, both high luminous efficacy and CRI was achieved.
Keywords :
light emitting diodes; phosphors; LED device; color-tunable device; laser-micromachined trenches; light-emitting diode chip vertical integration; luminous efficacy; phosphor-free white light LED; tricolor light-emitting diode device; Color; Image color analysis; Laser theory; Light emitting diodes; Micromachining; Semiconductor lasers; Stimulated emission; LED; chip-stacking; laser-micromachining;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117561
