DocumentCode
2848655
Title
The variable threshold FET: Theory and experiment
Author
Sewell, F. ; Wegener, H. ; Lewis, Elfed
Author_Institution
Sperry Rand Res. Center, Sudbury, Mass., USA
Volume
XII
fYear
1969
fDate
19-21 Feb. 1969
Firstpage
182
Lastpage
183
Abstract
The general theoretical model predicts the amount of threshold voltage change with time for both writing and storage modes of operation. Experimental data fit these theoretical expressions containing no adjustable parameter.
Keywords
Capacitors; Conductivity; Contracts; Difference equations; Electrodes; FETs; Insulation; Poisson equations; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1969.1154768
Filename
1154768
Link To Document