A two-dimensional short-channel model for threshold voltage of tri-gate (TG) MOSFETs with localized trapped charges

Based on two-dimensional solution of Poisson equation and perimeter-weighted-sum approach, a short-channel threshold voltage model for the tri-gate (TG) MOSFETs with localized trapped charges is developed by considering the effects of equivalent oxide charges on the flat-band voltage. The model shows that threshold voltage behavior is strongly affected by the positive/negative trapped charges, silicon thickness, oxide thickness, and normalized damaged zone affect. The three-dimensional device simulator model verifies the model by the good match with each other. The model can be efficiently used to investigate the hot-carrier-induced threshold voltage degradation of the advanced TG charge-trapped memory device.