• DocumentCode
    2848704
  • Title

    ESD-aware circuit design in CMOS integrated circuits to meet system-level ESD specification in microelectronic systems

  • Author

    Ker, Ming-Dou

  • Author_Institution
    Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    17-18 Nov. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Circuit solution for system-level electrostatic discharge (ESD) protection is presented in this invited talk. To prevent the microelectronic system frozen at the malfunction or upset states after system-level ESD test, on-chip ESD-aware circuit in CMOS ICs should be built to rescue itself from the unknown states for returning normal system operation. A novel concept of transient-to-digital converter is innovatively provided to detect the fast electrical transients during the system-level ESD events. The output digital thermometer codes of the transient-to-digital converter can correspond to the different ESD voltages during system-level ESD tests. The proposed solution has been applied in some display panels to automatically recover the system operations after system-level ESD test.
  • Keywords
    CMOS integrated circuits; circuit reliability; electrostatic discharge; CMOS integrated circuits; ESD protection; ESD-aware circuit design; meet system-level ESD specification; microelectronic systems; on-chip ESD-aware circuit; system-level electrostatic discharge; transient-to-digital converter; CMOS integrated circuits; Electrostatic discharges; Microelectronics; Microprogramming; Noise; Transient analysis; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
  • Conference_Location
    Tianjin
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1998-1
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/EDSSC.2011.6117567
  • Filename
    6117567