• DocumentCode
    2848728
  • Title

    Modeling of advanced memories

  • Author

    Makarov, A. ; Selberherr, S. ; Sverdlov, V.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Wien, Austria
  • fYear
    2011
  • fDate
    17-18 Nov. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Results of modeling of advanced memories, such as one-transistor/no capacitor random access memory (Z-RAM), Resistive RAM (RRAM), and Spin Transfer Torque Magnetic RAM (STTRAM), are presented.
  • Keywords
    random-access storage; RRAM; STTRAM; Z-RAM; advanced memories; one-transistor-no capacitor random access memory; resistive RAM; spin transfer torque magnetic RAM; Capacitors; Junctions; Magnetic hysteresis; Magnetic tunneling; Phase change random access memory; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
  • Conference_Location
    Tianjin
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1998-1
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/EDSSC.2011.6117568
  • Filename
    6117568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848728