A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices

Author

Lai, Sheng-Chih ; Lue, Hang-Ting ; Hsieh, Jung-Yu ; Yang, Ming-Jui ; Chiou, Yan-Kai ; Wu, Chia-Wei ; Wu, Tai-Bor ; Luo, Guang-Li ; Chien, Chao-Hsin ; Lai, Erh-Kun ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co. Ltd., Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

The erase and retention characteristics of MONOS, MANOS and BE-SONOS devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (ETUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

Keywords

MOS memory circuits; flash memories; BE-SONOS devices; MANOS devices; MONOS devices; erase mechanisms; erase transient current; nonvolatile memory devices; retention mechanisms; tunnel oxide electric field; Channel bank filters; Dielectric thin films; Furnaces; MOCVD; MONOS devices; Nonvolatile memory; Photonic band gap; Rapid thermal processing; Transient analysis; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378898

Filename

4239466