Title :
A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices
Author :
Lai, Sheng-Chih ; Lue, Hang-Ting ; Hsieh, Jung-Yu ; Yang, Ming-Jui ; Chiou, Yan-Kai ; Wu, Chia-Wei ; Wu, Tai-Bor ; Luo, Guang-Li ; Chien, Chao-Hsin ; Lai, Erh-Kun ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co. Ltd., Hsinchu
Abstract :
The erase and retention characteristics of MONOS, MANOS and BE-SONOS devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (ETUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.
Keywords :
MOS memory circuits; flash memories; BE-SONOS devices; MANOS devices; MONOS devices; erase mechanisms; erase transient current; nonvolatile memory devices; retention mechanisms; tunnel oxide electric field; Channel bank filters; Dielectric thin films; Furnaces; MOCVD; MONOS devices; Nonvolatile memory; Photonic band gap; Rapid thermal processing; Transient analysis; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378898
