A fully integrated 0.18 µm SiGe BiCMOS low power 60 GHz receiver & transmitter for high data rate wireless communications

Author

Yeo, Kiat Seng ; Lim, Kok Meng ; Gu, Jiangmin ; Yan, Jinna ; Wang, Keping ; Lu, Yang ; Pan, Renjing ; Lim, Wei Meng ; Ma, Jian-Guo

Author_Institution

Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

In this paper, a 60 GHz low power RX and TX front ends are presented. The RX has more than 19 dB of gain between 58.2 and 67.8 GHz, an average NF of 8.7 across the frequency band of interest, and a P1dB of -24.4 dBm. The high performance RX chip only consumes 32.6 mW of power, including the buffers used to drive measurement equipment. The TX employs the sliding-IF scheme with first IF at one fifth of RF frequency. Results show a saturated power output of 12.7 dBm and a P1dB point at 11 dBm. It provides a bandwidth spanning from 48 GHz to 66 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; radio receivers; radio transmitters; SiGe; SiGe BiCMOS; bandwidth 48 GHz to 66 GHz; frequency 60 GHz; high data rate wireless communication; low power receiver; low power transmitter; power 32.6 mW; size 0.18 micron; Architecture; BiCMOS integrated circuits; Gain; Noise measurement; Power amplifiers; Receivers; Silicon germanium; 0.18 µm; 60GHz; BiCMOS; SiGe; millimeter wave; quadrature mixer; receiver; sliding-IF; sub-harmonic; transmitter; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117570

Filename

6117570