Title :
Whole chip ESD protection for 2.4 GHz LNA
Author :
Jin, H. ; Dong, S.R. ; Miao, M. ; Wu, J. ; Ma, F. ; Luo, J.K. ; Liou, Juin J.
Author_Institution :
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Abstract :
Whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under 0.18 μm radio frequency (RF) CMOS process is proposed in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for I/O pad ESD protection is evaluated and compared with traditional SCR and diode. Results show that the island complementary SCR (MSCRIsland) structure has highest figure of merit (FOM) and its ESD protection for RF I/O passes 6 kV human body model (HBM), while extra 0.28 dB noise figure (NF) and 178 fF capacitance is introduced into LNA by this ESD protection. LNA power clamp ESD protection is also designed as RC triggered various devices, such as NMOS, SCR and their mixture. Results show that RC trigger NMOS-SCR has high robustness and turn-on speed and its power clamp protection passes 5 kV HBM.
Keywords :
CMOS analogue integrated circuits; capacitance; electrostatic discharge; low noise amplifiers; thyristors; FOM; HBM; I/O pad ESD protection; LNA power clamp ESD protection; MSCRIsland structure; RC trigger NMOS-SCR; RC triggered various devices; RF CMOS process; RF I/O; capacitance; capacitance 178 fF; complementary silicon controlled rectifier; figure of merit; frequency 2.4 GHz; human body model; island complementary SCR structure; low noise amplifier; noise figure; noise figure 0.28 dB; power clamp protection; radio frequency CMOS process; turn-on speed; whole chip electrostatic discharge protection; Clamps; Electrostatic discharges; Parasitic capacitance; Radio frequency; Robustness; Thyristors; Electrostatic discharge (ESD); low noise amplifier (LNA); parasitic capacitance;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117571
