DocumentCode
2848856
Title
Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection
Author
Padilla, Alvaro ; Liu, Tsu-Jae King
Author_Institution
Univ. of California at Berkeley, Berkeley
fYear
2007
fDate
23-25 April 2007
Firstpage
1
Lastpage
2
Abstract
A new charge detection method in which the off-state current is used to detect charge stored near to the drain is demonstrated for dual-bit SONOS FinFET NVM cells for the first time. This method is very sensitive to charge stored near to the drain electrode and thus can facilitate gate-length scaling of dual-bit SONOS NVM devices.
Keywords
MOS memory circuits; flash memories; charge detection method; charge storage detection; drain electrode; dual-bit SONOS FinFET nonvolatile memory cell; flash NVM; gate-length scaling; off-state current; silicon-oxide-nitride-oxide-silicon memory cell; Dielectrics; Electrodes; Electronic mail; Electrons; FinFETs; Flash memory; Nonvolatile memory; SONOS devices; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0584-X
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2007.378903
Filename
4239471
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