Title :
Criterion of intrinsic charge bistability appearance in double-barrier resonant-tunneling structures
Author :
Baranov, Alexander V. ; Dragunov, V.P.
Author_Institution :
Dept. of Phys., Novosibirsk State Tech. Univ., Russia
Abstract :
The model of intrinsic charge bistability in double-barrier resonant-tunneling structure was modified taking into account an approximate energy dependence of the barrier transmission coefficient and a form of the charge distribution in the quantum well. A criterion of bistability appearance in symmetric structures was obtained and extended to structures with many-valley electron tunneling transport
Keywords :
many-valley semiconductors; resonant tunnelling; resonant tunnelling devices; semiconductor quantum wells; space charge; GaSb-AlSb; barrier transmission coefficient; charge distribution; double-barrier resonant-tunneling structures; energy dependence; intrinsic charge bistability; many-valley electron tunneling transport; model; quantum well; symmetric structures; Current-voltage characteristics; Electron emission; Electrostatics; Hysteresis; Physics; Resonance; Resonant tunneling devices; Space charge; State feedback; Voltage;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768895
