Title :
SiGe/Si HBT Modeling for AMS/RF Applications
Author :
Yang, M.T. ; Kuo, Darryl C W ; Chang, Alan K L ; Kuo, C.W. ; Lee, C.Y. ; Chern, G.J. ; Liu, Sally ; Tang, Denny D.
Author_Institution :
TSMC, Hsin-Chu
Abstract :
SiGe/Si HBT combining the integration and cost benefits of silicon has came of age as an ideal process for wireless/wired communication applications. To encompass both high-speed analog and wireless circuit applications, production-proven Spice model of HBT that allows the great amount of flexibility and provides excellent model accuracy over a broad range of applications is highly desirable. This paper reports on an unitary set of geometry-scalable, wide-band models for the HBTs of 0.18 um BiCMOS technology. Verification of the scalable model is achieved with focus on the correlations of DC, Y-parameter and fT, noise, large-signal and Monte-Carlo of mismatch and statistical covers a wide range of product requirement.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; Monte Carlo methods; SPICE; heterojunction bipolar transistors; radiocommunication; semiconductor device models; silicon; AMS-RF applications; BiCMOS technology; HBT modeling; Monte-Carlo correlation; SiGe-Si; Spice model; Y-parameter; high-speed analog circuit applications; size 0.18 mum; wide-band models; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Libraries; Logic devices; Predictive models; Radio frequency; Semiconductor device modeling; Silicon germanium; Solid modeling; AMS; HBT; Mextram model; RF; SiGe;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378904
