Author :
Singanamalla, R. ; van Dal, M.J.H. ; Demand, M. ; Shamiryan, D. ; Beckx, S. ; Jaenen, P. ; Locorotondo, S. ; Yu, H. ; Hooker, J.C. ; Kubicek, S. ; De Meyer, K. ; Biesemans, S. ; Juffermans, C. ; Lander, R.J.P.
Abstract :
We demonstrate for the first time the CMOS integration combining inserted metal with FUSI using a novel process flow. The proposed flow allows for a flexible gate electrode and dielectric choice for island PMOSFETS, without adding excessive process complexity or additional masks. It is considered as a promising alternative for dual metal integration for 45 nm bulk CMOS technology and beyond.
Keywords :
CMOS analogue integrated circuits; MOSFET; nickel compounds; semiconductor device metallisation; tantalum compounds; CMOS integration; FUSI dual metal integration; NiSi; TaN; dielectric choice; flexible gate electrode; island PMOSFET; metal inserted poly-Si MIPS; CMOS process; CMOS technology; Capacitance; Dielectric materials; Electrodes; Etching; Inorganic materials; MOSFETs; Oxidation; Tin;
