Title :
Band Edge High-κ /Metal Gate n-MOSFETs Using Ultra Thin Capping Layers
Author :
Paruchuri, V.K. ; Narayanan, V. ; Linder, B.P. ; Brown, S.L. ; Kim, Y.H. ; Wang, Y. ; Ronsheim, P. ; Jammy, R. ; Chen, T.C.
Author_Institution :
IBM, Hopewell Junction
Abstract :
Ultra thin layers of magnesium containing cap layers are deposited on Hf based dielectrics prior to deposition of the TiN/Poly-Si electrode stack [1] to achieve band-edge (BE) high-kappa/metal nMOSFETs with good mobility (190 cm2/Vs @ 1 MV/cm) at Tinv (1.45 nm), in a gate first process flow. It is shown that Vt can be modulated anywhere between midgap and band edge by changing the cap layer thickness. Short channel devices with band edge characteristics are demonstrated down to 40 nm.
Keywords :
MOSFET; carrier mobility; dielectric materials; hafnium; magnesium; semiconductor technology; thin films; Hf; Mg; band edge high-kappa/metal gate n-MOSFET; carrier mobility; dielectric material; electrode stack; ultra thin capping layer deposition; CMOS technology; Degradation; Electrodes; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Jamming; MOSFET circuits; Tin;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378907
