Band Edge High-κ /Metal Gate n-MOSFETs Using Ultra Thin Capping Layers

Author

Paruchuri, V.K. ; Narayanan, V. ; Linder, B.P. ; Brown, S.L. ; Kim, Y.H. ; Wang, Y. ; Ronsheim, P. ; Jammy, R. ; Chen, T.C.

Author_Institution

IBM, Hopewell Junction

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

Ultra thin layers of magnesium containing cap layers are deposited on Hf based dielectrics prior to deposition of the TiN/Poly-Si electrode stack [1] to achieve band-edge (BE) high-kappa/metal nMOSFETs with good mobility (190 cm²/Vs @ 1 MV/cm) at T_inv (1.45 nm), in a gate first process flow. It is shown that V_t can be modulated anywhere between midgap and band edge by changing the cap layer thickness. Short channel devices with band edge characteristics are demonstrated down to 40 nm.

Keywords

MOSFET; carrier mobility; dielectric materials; hafnium; magnesium; semiconductor technology; thin films; Hf; Mg; band edge high-kappa/metal gate n-MOSFET; carrier mobility; dielectric material; electrode stack; ultra thin capping layer deposition; CMOS technology; Degradation; Electrodes; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Jamming; MOSFET circuits; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378907

Filename

4239475