DocumentCode :
2848934
Title :
Line width dependent mobility in high-k a comparative performance study between FUSI and TiN
Author :
Pantisano, L. ; Trojman, Lionel ; Andres, E.S. ; Kerner, C. ; Veloso, A. ; Ferain, I. ; Hoffman, T. ; Groeseneken, Guido ; De Gendt, Stefan
Author_Institution :
IMEC Leuven, Leuven
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
An original detailed methodology has been demonstrated for comparing short channel device performances in HfSiON and two different MG integration schemes. In HfSiON there is substantial room for improvement towards shorter metallurgical gate length and lower series resistance to obtain the desired ION-IOFF performances.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; titanium compounds; FUSI; HfSiON; MG integration schemes; TiN; high k; line width dependent mobility; metallurgical gate length; short channel device performances; Chemistry; Dielectric devices; Doping; Electric variables measurement; Etching; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Robustness; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378909
Filename :
4239477
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2848934
بازگشت