• DocumentCode
    2848939
  • Title

    Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

  • Author

    Wen, Huang-Chun ; Choi, Kisik ; Park, C.S. ; Majhi, Prashant ; Harris, H. Rusty ; Niimi, Hiro ; Park, Hong-Bae ; Bersuker, Gennadi ; Lysaght, Patrick ; Kwong, D.L. ; Song, S.C. ; Lee, Byong Hun ; Jammy, Raj

  • Author_Institution
    Texas Univ., Austin
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (Ef) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (Vfb,) rolloff effect" is shown to be the dominant factor.
  • Keywords
    Fermi level; MOS integrated circuits; electrodes; fermi-level pinning; flatband roll-off; p-MOS EWF; p-type band-edge effective work function metal electrodes; Annealing; Conducting materials; Drives; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Instruments; Jamming; Time of arrival estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378910
  • Filename
    4239478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848939