Title :
A read-only memory using MAS transistors
Author :
Nakanuma, S. ; Tsujide, T. ; Igarashi, R. ; Onoda, K. ; Wada, Tomotaka ; Nakagiri, M.
Author_Institution :
Nippon Electric Co., Ltd. Kawasaki, Japan
Abstract :
A nonvolatile read-only memory using MAS (metal-alumina-silicon) transistors, that is electrically writable, is expected to hold written data for 1019hrs., and is resettable by radiation, such as x-rays and electron beams without damage, will be described.
Keywords :
Costs; MOSFETs; Nonvolatile memory; Read-write memory; Resistors; Semiconductor films; Silicon; Substrates; Threshold voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154787
