• DocumentCode
    2848966
  • Title

    A read-only memory using MAS transistors

  • Author

    Nakanuma, S. ; Tsujide, T. ; Igarashi, R. ; Onoda, K. ; Wada, Tomotaka ; Nakagiri, M.

  • Author_Institution
    Nippon Electric Co., Ltd. Kawasaki, Japan
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    A nonvolatile read-only memory using MAS (metal-alumina-silicon) transistors, that is electrically writable, is expected to hold written data for 1019hrs., and is resettable by radiation, such as x-rays and electron beams without damage, will be described.
  • Keywords
    Costs; MOSFETs; Nonvolatile memory; Read-write memory; Resistors; Semiconductor films; Silicon; Substrates; Threshold voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154787
  • Filename
    1154787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848966