Title :
Research of convergence of the Poisson and current continuity equation in heterojunction
Author :
Makarov, E.A. ; Sychev, A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
A program for modeling structures, containing both sharp and smooth heterojunctions is created. The program is based on Fermi-Dirac statistics, and takes into account diffusion and drift of charge carriers, as well as thermionic issues at the hetero-interface
Keywords :
III-V semiconductors; Poisson equation; aluminium compounds; convergence of numerical methods; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor heterojunctions; AlGaAs-GaAs; AlGaAs/GaAs heterojunctions; Fermi-Dirac statistics; HEMT structures; Poisson equation; charge carrier diffusion; charge carrier drift; convergence; current continuity equation; semiconductor heterojunction; sharp heterojunctions; smooth heterojunctions; thermionic issues; Aluminum; Charge carrier processes; Conductivity; Convergence; Electron emission; Electron mobility; Electrostatics; Heterojunctions; Poisson equations; Statistics;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768904
