DocumentCode
2848989
Title
Designs of high performance TTL integrated circuits employing CDI component structures
Author
Gary, P. ; Pedersen, Rasmus ; Soloway, B. ; Reed, Robert
Author_Institution
Bell Telephone Laboratories, Inc., Allentown, PA, USA
Volume
XIII
fYear
1970
fDate
18-20 Feb. 1970
Firstpage
116
Lastpage
117
Abstract
Application of collector-diffusion-isolated (CDI) device structures to high-performance TTL, to take advantage of simpler processing and reduced area requirements per gate, will be described. Modifications in basic TTL and device structures which produce propagation delays of 4 ns at a 6 mW power level will be discussed.
Keywords
Bipolar integrated circuits; Capacitance; Electron devices; Epitaxial layers; Fabrication; Laboratories; Logic circuits; Logic devices; Performance gain; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1970.1154789
Filename
1154789
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