DocumentCode :
2848989
Title :
Designs of high performance TTL integrated circuits employing CDI component structures
Author :
Gary, P. ; Pedersen, Rasmus ; Soloway, B. ; Reed, Robert
Author_Institution :
Bell Telephone Laboratories, Inc., Allentown, PA, USA
Volume :
XIII
fYear :
1970
fDate :
18-20 Feb. 1970
Firstpage :
116
Lastpage :
117
Abstract :
Application of collector-diffusion-isolated (CDI) device structures to high-performance TTL, to take advantage of simpler processing and reduced area requirements per gate, will be described. Modifications in basic TTL and device structures which produce propagation delays of 4 ns at a 6 mW power level will be discussed.
Keywords :
Bipolar integrated circuits; Capacitance; Electron devices; Epitaxial layers; Fabrication; Laboratories; Logic circuits; Logic devices; Performance gain; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1970.1154789
Filename :
1154789
Link To Document :
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