A study of interface states of directly bonded silicon-on-insulator (SOI) structures

Author

Buldygin, S.A. ; Bulycheva, T.V. ; Golod, S.V. ; Drofa, A.T. ; Kamaev, G.N. ; Skok, E.M.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

1998

fDate

1998

Firstpage

49

Lastpage

53

Abstract

In this paper, experimental data on the temperature-dependent transient photoconductivity obtained on bonded SOI structures are presented. It is shown that, during the bonding process at the interface of the sample, electrically active states appear. The values of activation energies and capture cross-sections of charge carriers at the interface are similar to those at the interface of silicon and thermal oxide

Keywords

interface states; photoconductivity; silicon-on-insulator; transient analysis; Si-SiO₂; activation energies; charge carrier capture cross-sections; directly bonded SOI structures; electrically active states; interface states; temperature-dependent transient photoconductivity; trap level energy parameters; Bonding processes; Charge carriers; Conductivity; Energy measurement; Interface states; Microwave measurements; Microwave theory and techniques; Photoconductivity; Silicon on insulator technology; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768906

Filename

768906