Title :
SiGe Channel CMOSFETs Fabricated on (110) Surfaces with TaC/HfO2 Gate Stacks
Author :
Liu, P.W. ; Lin, Y.H. ; Chiang, W.T. ; Tsai, C.H. ; Cheng, L.W. ; Tsai, C.T. ; Ma, G.H.
Author_Institution :
United Microelectron. Corp., Hsinchu
Abstract :
The promising potential of SiGe channel for next generation CMOSFETs applications has been demonstrated on (110) surfaces. SiGe channel CMOSFETs with TaC/FffO2 gate stack were fabricated on (110) surfaces for the first time. By introducing SiGe for channel material, the mobility of n/p-MOSFETs with TaC/HfO2 gate stacks can be greatly improved compared to Si channel devices with the same metal-gate/high-K gate stacks. The (110) SiGe channel n/p-MOSFETs with TaC/FffO2 gate stacks show 1.8x and 2.4x mobility enhancements over (110) Si devices with TaC/HfO2. The 23% propagation time delay improvement of ring oscillators fabricated with (110) SiGe channel CMOSFETs and poly/oxynitride gate stacks also proves the feasibility of (110) SiGe channel.
Keywords :
CMOS integrated circuits; Ge-Si alloys; carrier mobility; hafnium compounds; oscillators; tantalum compounds; CMOSFET; SiGe; TaC-HfO2; gate stacks; mobility enhancements; ring oscillators; CMOSFETs; Delay effects; Germanium silicon alloys; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Ring oscillators; Silicon germanium;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378914
