Title :
Synthesis and structure of oxygenated fullerene film
Author :
Shevtsov, Yu.V. ; Berdinsky, A.S. ; Okotrub, A.V. ; Yanovsky, Yu.A. ; Ayupov, B.M. ; Guselnikov, A.V. ; Kravtchenko, V.S.
Author_Institution :
Inst. of Inorg. Chem., Acad. of Sci., Novosibirsk, Russia
Abstract :
The conductive properties of C60 films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C60 films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 °C. Reflection IR spectra were obtained for films on silicon substrates
Keywords :
annealing; fullerenes; infrared spectra; oxidation; reflectivity; vapour deposited coatings; 30 min; 330 to 390 C; C60; C60 films; C60O; O2 annealing; conductive properties; dry Ar; fullerene film structure; gas-phase deposition; low pressure; oxidation process; oxygenated fullerene film; reflection IR spectra; semiconducting behavior; Amorphous materials; Annealing; Argon; Conductive films; Optical films; Oxidation; Reflection; Semiconductivity; Semiconductor films; Temperature;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.768907
