Synthesis and structure of oxygenated fullerene film

Author

Shevtsov, Yu.V. ; Berdinsky, A.S. ; Okotrub, A.V. ; Yanovsky, Yu.A. ; Ayupov, B.M. ; Guselnikov, A.V. ; Kravtchenko, V.S.

Author_Institution

Inst. of Inorg. Chem., Acad. of Sci., Novosibirsk, Russia

fYear

1998

fDate

1998

Firstpage

54

Abstract

The conductive properties of C₆₀ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C₆₀ films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 °C. Reflection IR spectra were obtained for films on silicon substrates

Keywords

annealing; fullerenes; infrared spectra; oxidation; reflectivity; vapour deposited coatings; 30 min; 330 to 390 C; C₆₀; C₆₀ films; C₆₀O; O₂ annealing; conductive properties; dry Ar; fullerene film structure; gas-phase deposition; low pressure; oxidation process; oxygenated fullerene film; reflection IR spectra; semiconducting behavior; Amorphous materials; Annealing; Argon; Conductive films; Optical films; Oxidation; Reflection; Semiconductivity; Semiconductor films; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768907

Filename

768907