Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET

The physics of quasi-ballisticity and electron backscattering in silicon double gate nMOSFETs are studied by a stable deterministic solver. A strong velocity overshoot can be observed at both high bias and very low bias for the on-state, but the ballistic limit is not reached. The reflection coefficient is calculated by the directional currents at different biases. Quasi ballistic transport occurs in the regions with large driving forces, while scattering still dominates in the regions, which determine the drain current in this I6nm device.