Title :
Improved NBTI in SiN-Capped PMOSFETs with Ultra-thin HfO2 Buffer
Author :
Lu, Ching-Sen ; Lin, Horng-Chih ; Chen, Ying-Hung ; Huang, Tiao-Yuan
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
Although a compressive SiN capping could effectively boost the drive current of PMOS devices, it may concomitantly worsen the NBTI characteristics owing to the high hydrogen content in the SiN layer which might diffuse to the channel region during processing. To address this issue, inserting a thin 3 nm HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the performance enhancement by SiN capping.
Keywords :
MOSFET; buffer layers; hafnium compounds; hydrogen; integrated circuit reliability; silicon compounds; thermal stability; HfO2; NBTI reliability; SiN; SiN-capped PMOSFET; negative bias temperature instability; size 3 nm; ultrathin HfO2 buffer layer; Buffer layers; Hafnium oxide; Hydrogen; MOS devices; MOSFETs; Niobium compounds; Silicon compounds; Stress; Titanium compounds; Uniaxial strain;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378917
