• DocumentCode
    2849068
  • Title

    A diode-coupled bipolar transistor memory cell

  • Author

    Lynes, D. ; Hodges, D.A.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    A 30 mil2memory cell employing Schottky diodes and epitaxial sheet resistors will be described. In large arrays, expected cycle time is 60 ns and standby power is 75 μW. Projected store cost is one cent per bit.
  • Keywords
    Bipolar transistors; Computer aided software engineering; Decoding; Delay; Electronics industry; Integrated circuit interconnections; Magnetic memory; Semiconductor device manufacture; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154794
  • Filename
    1154794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849068