Title :
A diode-coupled bipolar transistor memory cell
Author :
Lynes, D. ; Hodges, D.A.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
Abstract :
A 30 mil2memory cell employing Schottky diodes and epitaxial sheet resistors will be described. In large arrays, expected cycle time is 60 ns and standby power is 75 μW. Projected store cost is one cent per bit.
Keywords :
Bipolar transistors; Computer aided software engineering; Decoding; Delay; Electronics industry; Integrated circuit interconnections; Magnetic memory; Semiconductor device manufacture; Semiconductor diodes; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154794
