RTS and 1/f Noise in Flash Memory

This work investigates the RTS noise in Flash memory from the perspective of a single cell. In this study, RTS noise in a cell is measured in the frequency domain instead of time domain to increase the efficient identification of individual RTS traps over a broader range of trap lifetime, from seconds to mus in comparison to the conventional time domain approach which typically identifies traps with ms lifetimes at shortest. By converting the frequency domain parameters back to their time domain counterparts, the trap location in the tunneling oxide can be characterized. This work also revisits the relationship between RTS and 1/f noise of flash cells and investigates the change of RTS noise after P/E cycling.