Title :
Silicon radiation detector development at VTT
Author :
Kalliopuska, J.J. ; Eränen, S. ; Virolainen, T. ; Kämäräinen, V. ; Ji, F. ; Garcia, F. ; Orava, R. ; van Remortel, N. ; Santala, M.
Author_Institution :
VTT Microelectron., Espoo
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
VTT has two decades experience on the manufacturing and design of the silicon radiation detectors. The activities cover a range of industrial devices as well as the devices for the physics experiments. The paper gives an overview on the new solid state detector development activity at VTT that comprise advanced X-ray photo diodes, through wafer interconnections for the photo diode arrays, thin silicon strip detectors, active-edge strip and pixel detectors with different biasing schemes, and full 3D 1 mm thick active edge silicon detectors.
Keywords :
nuclear electronics; photodiodes; radiation detection; readout electronics; silicon radiation detectors; VTT; X-ray photodiodes; industrial devices; pixel detectors; radiation detection; read-out circuit; silicon radiation detectors design; solid state detector; thin silicon strip detectors; wafer interconnections; Diodes; Manufacturing industries; Physics; Radiation detectors; Silicon on insulator technology; Silicon radiation detectors; Solid state circuits; Space technology; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4437282
