• DocumentCode
    2849088
  • Title

    Electronically-variable semiconductor memory using two diodes per memory cell

  • Author

    Waaben, S.

  • Author_Institution
    Bell Telephone Labs., Murray Hill, NJ, USA
  • Volume
    XIII
  • fYear
    1970
  • fDate
    18-20 Feb. 1970
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    A read-write memory cell consisting of a high-barrier Schottky diode with a diffused guard ring connected in series with a diffused PN junction diode will be presented. One layer metallization connects the pairs of diodes in an array which can be accessed in random.
  • Keywords
    Capacitance; Flip-flops; Laboratories; Random access memory; Schottky diodes; Semiconductor diodes; Semiconductor memory; Telephony; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1970.1154795
  • Filename
    1154795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849088