Title :
Electronically-variable semiconductor memory using two diodes per memory cell
Author_Institution :
Bell Telephone Labs., Murray Hill, NJ, USA
Abstract :
A read-write memory cell consisting of a high-barrier Schottky diode with a diffused guard ring connected in series with a diffused PN junction diode will be presented. One layer metallization connects the pairs of diodes in an array which can be accessed in random.
Keywords :
Capacitance; Flip-flops; Laboratories; Random access memory; Schottky diodes; Semiconductor diodes; Semiconductor memory; Telephony; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1970 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1970.1154795
