DocumentCode :
2849104
Title :
Evaluation of S/D Resistance (RSD) and Strain Scalability by Mechanical-bending Approach
Author :
Wu, Kehuey ; Chang, Chih-Sheng ; Lin, Hong-Nien ; Lee, Wen-Chin
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
A simple yet effective approach for the extraction of source/drain (S/D) series resistance RSD using mechanical four-point bending is presented. This new approach can be used to extract the RSD of each device disregarding its channel length. According to the results, the benefits of RSD reduction become more prominent in shorter channel devices. Further analysis reveals that the strain-induced enhancement is suppressed in shorter channel devices than longer channel ones due to higher channel doping necessitated by short-channel control.
Keywords :
CMOS integrated circuits; bending; doping; scaling circuits; S/D resistance; channel doping; channel length; mechanical-bending approach; source/drain series resistance; strain scalability; CMOS technology; Capacitive sensors; Data mining; Doping; Driver circuits; Equivalent circuits; Scalability; Semiconductor device manufacture; Strain control; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378920
Filename :
4239488
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2849104
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