DocumentCode :
2849107
Title :
Methods of control of technological process of an electronic irradiation of power semiconductor devices (PSD)
Author :
Geifman, E.M. ; Kanev, D.D. ; Fedotov, A.N. ; Chibirkin, V.V.
Author_Institution :
Open Joint-Stock Co. Electrovipryamitel, Mordovia, Russia
fYear :
1998
fDate :
1998
Firstpage :
71
Lastpage :
74
Abstract :
The technological process of electronic irradiation is applied in batch production of power semiconductor devices (PSDs) for improving their dynamic characteristics. As the capacities of converters have been growing and because of the necessity to use PSD at parallel and series connections, PSDs should have values of on-state voltage (Utm) and reverse recovery charge (Qrr) that differ from each other by the preset value but no more. The authors develop methods of regulation of the values of Qrr and Utm of semiconductor devices with preset precision
Keywords :
electron beam effects; power semiconductor devices; process control; voltage control; batch production; dynamic characteristics; electronic irradiation; on-state voltage; power semiconductor devices; reverse recovery charge; technological process control; Area measurement; Equations; Power semiconductor devices; Process control; Production; Semiconductor devices; Temperature dependence; Temperature measurement; Turing machines; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
Type :
conf
DOI :
10.1109/APEIE.1998.768912
Filename :
768912
Link To Document :
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