Title :
Investigation of the Strained PMOS on (110) Substrate
Author :
Tang, Chun-Jung ; Huang, Shih-Hian ; Wang, Tahui ; Chang, Chih-Sheng
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
This paper performed a detail study on the strained PMOS fabricated on the (110) Si substrate. We showed that in the (110) plane, the four-fold symmetry direction, <111´>, has the ideal band-structure features for the uniaxial-process-induced hole mobility enhancement. We then characterized the mobility and back scattering ratio of the (110)/<111´> PMOS with multiple process induced stressors.
Keywords :
MOSFET; hole mobility; silicon; substrates; Si; back scattering ratio; ideal band-structure; strained PMOS fabrication; substrate; uniaxial-process-induced hole mobility enhancement; Capacitive sensors; Effective mass; Germanium silicon alloys; MOS devices; Piezoresistance; Quantization; Silicon germanium; Stress; Substrates; Uniaxial strain;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378929
